2007. 5. 10 1/7 semiconductor technical data khb9d5n20p1/f1/f2 n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switch mode power supplies. features v dss =200v, i d =9.5a drain-source on resistance : r ds(on) =400m @v gs = 10v qg(typ.)=18.5nc maximum rating (tc=25 ) characteristic symbol rating unit khb9d5n20p1 KHB9D5N20F1 khb9d5n20f2 drain-source voltage v dss 200 v gate-source voltage v gss 30 v drain current @t c =25 i d 9.5 9.5* a pulsed (note1) i dp 38 38* single pulsed avalanche energy (note 2) e as 180 mj repetitive avalanche energy (note 1) e ar 8.7 mj peak diode recovery dv/dt (note 3) dv/dt 5.5 v/ns drain power dissipation tc=25 p d 87 40 w derate above25 0.7 0.32 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 1.44 3.13 /w thermal resistance, junction-to- ambient r thja 62.5 62.5 /w dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 123 to-220is (1) a a b b c c d d e e f f g g h h 1.47 max 1.47 max 13.0 max j j k k l m l n nn o o q r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ 1. gate 2. drain 3. source g d s dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 1. gate 2. drain 3. source 10.0 0.3 + _ 15.0 0.3 + _ 2.70 0.3 + _ 3.2 0.2 + _ 3.0 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 2.54 0.1 + _ 6.8 0.1 + _ 4.5 0.2 + _ 2.6 0.2 + _ khb9d5n20p1 KHB9D5N20F1 khb9d5n20f2 pin connection
2007. 5. 10 2/7 khb9d5n20p1/f1/f2 revision no : 0 electrical characteristics (tc=25 ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l =3mh, i as =9.5a, v dd =50v, r g =25 , starting t j =25 . note 3) i s 9.5a, di/dt 300a/ , v dd bv dss , starting t j =25 . note 4) pulse test : pulse width 300 , duty cycle 2%. note 5) essentially independent of operating temperature. characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 200 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.19 - v/ gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v drain cut-off current i dss v ds =200v, v gs =0v, - - 1 a gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =4.75a - 345 400 m forward transconductance g fs v ds =40v, i d =4.75a (note4) - 6.7 - s dynamic total gate charge q g v ds =160v, i d =9.5a v gs =10v (note4, 5) - 18.5 23 nc gate-source charge q gs - 2.7 - gate-drain charge q gd - 9 - turn-on delay time t d(on) v dd =100v, r g =25 i d =9.5a (note4, 5) - 11 32 ns turn-on rise time t r - 62 135 turn-off delay time t d(off) - 46 102 turn-off fall time t f - 80 170 input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 387 503 pf output capacitance c oss - 96 125 reverse transfer capacitance c rss - 34 45 source-drain diode ratings continuous source current i s v gs 2007. 5. 10 3/7 khb9d5n20p1/f1/f2 revision no : 0 gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 -1 10 0 10 1 10 -1 10 0 10 1 10 0 10 1 10 -1 68 410 2 fig2. i d - v gs fig5. r ds(on) - i d fig6. r ds(on) - t j drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig6. i s - v sd 0.2 0.4 0.8 1.0 1.2 1.8 1.6 1.4 0.6 reverse drain current i s (a) 0 0 2.0 1.0 0.5 1.5 0 510 30 25 20 15 50 -100 -50 100 150 normalized on resistance source - drain voltage v sd (v) 0.0 0.5 3.0 2.5 1.0 1.5 2.0 junction temperature t j ( ) c 25 c 150 c v gs = 10v i ds = 5a 10 0 10 -1 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v fig4. bv dss - t j 0.8 1.2 1.0 0.9 1.1 -100 100 0 150 -50 50 normalized breakdown voltage bv dss junction temperature t j ( ) v gs = 0v i ds = 250 a c 150 c 25 c -55 c v gs = 20v v gs = 10v v ds = 40v 250 s pulse test
2007. 5. 10 4/7 khb9d5n20p1/f1/f2 revision no : 0 gate - charge q g (nc) fig7. c - v ds drain - source voltage v ds (v) 0 12 10 6 2 4 8 5 20 15 10 0 fig8. q g - v gs capacitance (pf) gate - source voltage v gs (v) 0 500 1500 2000 2500 1000 c oss c iss c rss 0 12 10 6 2 4 8 75 150 125 50 100 25 drain current i d (a) i d = 9.5a c junction temperature t j ( ) fig11. i d - t j v ds = 50v v ds = 125v v ds = 200v 10 - 1 10 0 10 1 drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area 10 1 10 -1 10 0 10 2 (khb9d5n20p1) 10 0 10 1 10 2 dc 10ms 100ms 1ms 100 s operation in this area is limited by r ds(on) t c = 25 t j = 150 single nonrepetitive pulse c c drain current i d (a) drain - source voltage v ds (v) fig10. safe operation area 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 (KHB9D5N20F1, khb9d5n20f2) operation in this area is limited by r ds(on) t c = 25 t j = 150 single nonrepetitive pulse c c dc 100 ms 10 ms 1 ms 100 s frequency =1mhz
2007. 5. 10 5/7 khb9d5n20p1/f1/f2 revision no : 0 time (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 0.02 0.2 0.01 fig12. transient thermal response curve normalized transient thermal resistance - duty factor, d= t 1 /t 2 t 1 t 2 p dm duty=0.5 s ingle pulse 0.05 time (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 0.2 0.01 fig13. transient thermal response curve normalized transient thermal resistance duty=0.5 singl e pulse 0. 05 0 .1 0.02 0.1 - duty factor, d= t 1 /t 2 t 1 t 2 p dm
2007. 5. 10 6/7 khb9d5n20p1/f1/f2 revision no : 0 fig14. gate charge i d i d v ds v gs v gs 1.0 ma 0.8 v dss fast recovery diode 10 v q g q gd q gs q t p fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 0.5 v dss 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss
2007. 5. 10 7/7 khb9d5n20p1/f1/f2 revision no : 0 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd 0.8 x v dss i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm v ds v ds v gs 0.5 v dss 10v 25 ? r l t r t d(off) t off t d(on) t on t f 10% 90% fig16. resistive load switching v gs
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